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Magazine Name : Ieee Transactions On Electron Devices
Year : 2004Volume number : 51Issue:07
Simulation And Properties Of Transitions To Traveling-Wave Deflection Systems(Article) Subject:
Compound Semiconductor Devices
Author:
S.
Staras
page:
1049
-
1052
Use Of Wnx As The Diffusion Barrier For Interconnect Copper Metallization Of Ingap-Gaap-Gaas Hbts(Article) Subject:
Compound Semiconductor Devices
Author:
S W
Chang
page:
1053
-
1059
Experimental Investigation Of The Temperature Dependence Of Inas-Aisb-Gasb Resonant Interband Tunnel Diodes(Article) Subject:
Compound Semiconductor Devices
Author:
Y
Xu
page:
1060
-
1064
Analytic Model Of 1-V Characteristics Of 4h-Sic Mesfets Based On Multiparameter Mobility Model(Article) Subject:
Compound Semiconductor Devices
Author:
H
Lv
page:
1065
-
1068
Sea Of Polymer Pillars Electrical And Optical Chip I/O Interconnections For Gigascale Integration(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
M.S
Bakir
page:
1069
-
1077
Contribution Of Dislocations To The Zero-Bias Resistance-Area Product Of Lwir Hgcdte Photodiodes At Low Temperatures(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
V
Gopal
page:
1078
-
1083
Integration Of Optical Polymer Pillars Chip I/O Interconnections With Si Msm Photodetectors(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
M.S
Bakir
page:
1084
-
1090
Characterization Of The Switching Parameters In The Dual-Channel Double Heterostructure Optoelectronic Switch(Article) Subject:
Optoelectronics, Displays And Imaging
Author:
H
Opper
page:
1091
-
1094
Analysis And Optimization Of Sdoi Structure To Maximize The Intrinsic Performance Of Extremely Scaled Mosfets(Article) Subject:
Silicon Devices
Author:
Z
Zhang
page:
1095
-
1100
A Low-Cost Fully Self-Aligned Sige Bicmos Technology Using Selective Epitaxy And A Lateral Quasi-Single-Poly Integration Concept(Article) Subject:
Silicon Devices
Author:
A T
Tilke
page:
1101
-
1107
A New Trench Bipolar Transistor For Rf Applications(Article) Subject:
Silicon Devices
Author:
Raymond J.E.
Hueting
page:
1108
-
1113
Thin-Film Strained-Soi Cmos Devices-Physical Mechanisms For Reduction Of Carrier Mobility(Article) Subject:
Silicon Devices
Author:
N
Sugiyama
page:
1114
-
1121
A Device Design Methology For Sub-100-Nm Soc Applications Using Bulk And Soi Mosfets(Article) Subject:
Silicon Devices
Author:
S S
Suryagandh
page:
1122
-
1128
Feature-Scale Process Simulation And Accurate Capacitance Extraction For The Backend Of A 100-Nm Aluminum/Teos Process(Article) Subject:
Silicon Devices
Author:
Clemens
Heitzinger
page:
1129
-
1134
Polysilicon Tft Structures For Kink-Effect Suppression(Article) Subject:
Silicon Devices
Author:
L
Mariucci
page:
1135
-
1142
Polysilicon Tft Structures For Kink-Effect Suppression(Article) Subject:
Silicon Devices
Author:
L
Mariucci
page:
1135
-
1142
Over-Erase Phenomenon In Sonos-Type Flash Memory And Its Minimization Using A Hanium Oxide Charge Storage Layer(Article) Subject:
Silicon Devices
Author:
Y N
Tan
page:
1143
-
1147
Over-Erase Phenomenon In Sonos-Type Flash Memory And Its Minimisation Using A Hafnium Oxide Charge Storage Layer(Article) Subject:
Silicon Devices
Author:
Y N
Tan
page:
1143
-
1147
On The Ballistic Transport In Nanometer-Scaled Dg Mosfets(Article) Subject:
Silicon Devices
Author:
J
Saint Martin
page:
1148
-
1155
On The Ballistic Transport In Nanometer-Scaled Dg Mosfets(Article) Subject:
Silicon Devices
Author:
J Saint
Martin
page:
1148
-
1155
Optimization Of Alloy Composition For High-Performance Strained-Si-Sige N-Channel Mosfets(Article) Subject:
Silicon Devices
Author:
Sarah H.
Olsen
page:
1156
-
1163
Optimization Of Alloy Composition For High-Performance Strained-Si-Sige N-Channel Mosfets(Article) Subject:
Silicon Devices
Author:
Sarah H.
Olsen
page:
1156
-
1163
The Role Of The Mercury-Si-Schottky-Barrier Height In Pseudo-Mosfets(Article) Subject:
Silicon Devices
Author:
J Y
Shoi
page:
1164
-
1168
Threshold Voltage Model For Mesa-Isolated Small Geometry Fully Depleted Soi Mosfets Based On Analytical Solution Of 3-Dpoisson'S Equation(Article) Subject:
Silicon Devices
Author:
G
Katti
page:
1169
-
1177
Highly Effective Junction Isolation Structures For Power Ics Based On Standard Cmos Process(Article) Subject:
Solid-State Power And High Voltage
Author:
T K H
Starke
page:
1178
-
1184
Gate Oxide Reliability Under Eso-Like Pulse Stress(Article) Subject:
Brief Description
Author:
J
Wu
page:
1192
-
1195
Physics-Based Mathematical Conditioning Of The Mosfet Surface Potential Equation(Article) Subject:
Brief Description
Author:
W
Wu
page:
1196
-
1200
An Efficient Analytical Approach For Extracting The Emitter Inductance Of Collector-Up Hbts(Article) Subject:
Brief Description
Author:
C. H
Tseng
page:
1200
-
1201
Properties Of Ai-Srtio3-Ito Capacitors For Microelectronic Device Applications(Article) Subject:
Brief Description
Author:
N
Konofaos
page:
1202
-
1204
Fast And Reliable Tunnel Programming Of Nanocrystal Nonvolatile Memories(Article) Subject:
Brief Description
Author:
G
Puzzilli
page:
1205
-
1206
Top-Emitting Oled Using Praseodymium Oxide Coated Platinum As Hole Injectors(Article) Subject:
Brief Description
Author:
C
Qiu
page:
1207
-
1210