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Magazine Name : Ieee Transactions On Electron Devices

Year : 2004 Volume number : 51 Issue: 07

Simulation And Properties Of Transitions To Traveling-Wave Deflection Systems (Article)
Subject: Compound Semiconductor Devices
Author: S. Staras     
page:      1049 - 1052
Use Of Wnx As The Diffusion Barrier For Interconnect Copper Metallization Of Ingap-Gaap-Gaas Hbts (Article)
Subject: Compound Semiconductor Devices
Author: S W Chang     
page:      1053 - 1059
Experimental Investigation Of The Temperature Dependence Of Inas-Aisb-Gasb Resonant Interband Tunnel Diodes (Article)
Subject: Compound Semiconductor Devices
Author: Y Xu     
page:      1060 - 1064
Analytic Model Of 1-V Characteristics Of 4h-Sic Mesfets Based On Multiparameter Mobility Model (Article)
Subject: Compound Semiconductor Devices
Author: H Lv     
page:      1065 - 1068
Sea Of Polymer Pillars Electrical And Optical Chip I/O Interconnections For Gigascale Integration (Article)
Subject: Optoelectronics, Displays And Imaging
Author: M.S Bakir     
page:      1069 - 1077
Contribution Of Dislocations To The Zero-Bias Resistance-Area Product Of Lwir Hgcdte Photodiodes At Low Temperatures (Article)
Subject: Optoelectronics, Displays And Imaging
Author: V Gopal     
page:      1078 - 1083
Integration Of Optical Polymer Pillars Chip I/O Interconnections With Si Msm Photodetectors (Article)
Subject: Optoelectronics, Displays And Imaging
Author: M.S Bakir     
page:      1084 - 1090
Characterization Of The Switching Parameters In The Dual-Channel Double Heterostructure Optoelectronic Switch (Article)
Subject: Optoelectronics, Displays And Imaging
Author: H Opper     
page:      1091 - 1094
Analysis And Optimization Of Sdoi Structure To Maximize The Intrinsic Performance Of Extremely Scaled Mosfets (Article)
Subject: Silicon Devices
Author: Z Zhang     
page:      1095 - 1100
A Low-Cost Fully Self-Aligned Sige Bicmos Technology Using Selective Epitaxy And A Lateral Quasi-Single-Poly Integration Concept (Article)
Subject: Silicon Devices
Author: A T Tilke     
page:      1101 - 1107
A New Trench Bipolar Transistor For Rf Applications (Article)
Subject: Silicon Devices
Author: Raymond J.E. Hueting     
page:      1108 - 1113
Thin-Film Strained-Soi Cmos Devices-Physical Mechanisms For Reduction Of Carrier Mobility (Article)
Subject: Silicon Devices
Author: N Sugiyama     
page:      1114 - 1121
A Device Design Methology For Sub-100-Nm Soc Applications Using Bulk And Soi Mosfets (Article)
Subject: Silicon Devices
Author: S S Suryagandh     
page:      1122 - 1128
Feature-Scale Process Simulation And Accurate Capacitance Extraction For The Backend Of A 100-Nm Aluminum/Teos Process (Article)
Subject: Silicon Devices
Author: Clemens Heitzinger     
page:      1129 - 1134
Polysilicon Tft Structures For Kink-Effect Suppression (Article)
Subject: Silicon Devices
Author: L Mariucci     
page:      1135 - 1142
Polysilicon Tft Structures For Kink-Effect Suppression (Article)
Subject: Silicon Devices
Author: L Mariucci     
page:      1135 - 1142
Over-Erase Phenomenon In Sonos-Type Flash Memory And Its Minimization Using A Hanium Oxide Charge Storage Layer (Article)
Subject: Silicon Devices
Author: Y N Tan     
page:      1143 - 1147
Over-Erase Phenomenon In Sonos-Type Flash Memory And Its Minimisation Using A Hafnium Oxide Charge Storage Layer (Article)
Subject: Silicon Devices
Author: Y N Tan     
page:      1143 - 1147
On The Ballistic Transport In Nanometer-Scaled Dg Mosfets (Article)
Subject: Silicon Devices
Author: J Saint Martin     
page:      1148 - 1155
On The Ballistic Transport In Nanometer-Scaled Dg Mosfets (Article)
Subject: Silicon Devices
Author: J Saint Martin     
page:      1148 - 1155
Optimization Of Alloy Composition For High-Performance Strained-Si-Sige N-Channel Mosfets (Article)
Subject: Silicon Devices
Author: Sarah H. Olsen     
page:      1156 - 1163
Optimization Of Alloy Composition For High-Performance Strained-Si-Sige N-Channel Mosfets (Article)
Subject: Silicon Devices
Author: Sarah H. Olsen     
page:      1156 - 1163
The Role Of The Mercury-Si-Schottky-Barrier Height In Pseudo-Mosfets (Article)
Subject: Silicon Devices
Author: J Y Shoi     
page:      1164 - 1168
Threshold Voltage Model For Mesa-Isolated Small Geometry Fully Depleted Soi Mosfets Based On Analytical Solution Of 3-Dpoisson'S Equation (Article)
Subject: Silicon Devices
Author: G Katti     
page:      1169 - 1177
Highly Effective Junction Isolation Structures For Power Ics Based On Standard Cmos Process (Article)
Subject: Solid-State Power And High Voltage
Author: T K H Starke     
page:      1178 - 1184
Gate Oxide Reliability Under Eso-Like Pulse Stress (Article)
Subject: Brief Description
Author: J Wu     
page:      1192 - 1195
Physics-Based Mathematical Conditioning Of The Mosfet Surface Potential Equation (Article)
Subject: Brief Description
Author: W Wu     
page:      1196 - 1200
An Efficient Analytical Approach For Extracting The Emitter Inductance Of Collector-Up Hbts (Article)
Subject: Brief Description
Author: C. H Tseng     
page:      1200 - 1201
Properties Of Ai-Srtio3-Ito Capacitors For Microelectronic Device Applications (Article)
Subject: Brief Description
Author: N Konofaos     
page:      1202 - 1204
Fast And Reliable Tunnel Programming Of Nanocrystal Nonvolatile Memories (Article)
Subject: Brief Description
Author: G Puzzilli     
page:      1205 - 1206
Top-Emitting Oled Using Praseodymium Oxide Coated Platinum As Hole Injectors (Article)
Subject: Brief Description
Author: C Qiu     
page:      1207 - 1210